creat by art - low profile package - ideal for automated placement - glass passivated junction - built-in strain relief - excellent clamping capability - typical ir less than 1 a above 10v - halogen-free according to iec 61249-2-21 definition molding compound, ul flammability classification rating 94v-0 part no. with suffix "h" means aec-q101 qualified packing code with suffix "g" means green compound (halogen-free) terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 2 whisker test symbol unit p pk watts p d watts t j c t stg c devices for bipolar applications 1. for bidirectional use c or ca suffix for types p6smb6.8 - types p6smb220a 2. electrical characteristi cs apply in both directions part no. note 1: "xxxx" defines voltage from 6.8v (p6s mb6.8) to 220v (p6smb220a) part no. document number: ds_d1409032 version: l15 aec-q101 qualified green compound p6smb20ahr5g p6smb20a h r5 g smb 3,000 / 13" plastic reel example preferred part no. part no. suffix packing code packing code suffix description p6smbxxxx (note 1) h r5 g smb 850 / 7" plastic reel r4 smb 3,000 / 13" paper reel m4 ordering information part no. suffix packing code packing code suffix package packing c/w 10 55 note 2: v f =3.5v on p6smb6.8 - P6SMB91 devices and v f =5.0v on p6smb100 - p6smb220 device. do-214aa (smb) steady state power dissipation 3 volts operating junction temperature range - 55 to +150 case: do-214aa (smb) peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm 100 storage temperature range - 55 to +150 note 1: non-repetitive current pulse per fig. 3 and derated above t a =25c per fig. 2 maximum instantaneous forward voltage at 50 a for unidirectional only (note 2) v f 3.5 / 5.0 polarity: indicated by cathode band weight: 0.09 g (approximately) typical thermal resistance r jc r ja maximum ratings and electrical characteristics (t a =25c unless otherwise noted) parameter value peak power dissipation at t a =25c, tp=1ms (note 1) 600 a p6smb series taiwan semiconductor 600w, 6.8v - 220v surface mount transient voltage suppressor features - fast response time: typically less than 1.0ps from 0 volt to bv min moisture sensitivity level: level 1, per j-std-020 - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec mechanical data
creat by art document number: ds_d1409032 version: l15 p6smb series taiwan semiconductor ratings and characteristics curves (t a =25c unless otherwise noted) 0 25 50 75 100 125 0 25 50 75 100 125 150 175 200 peak pulse power(p pp ) or current (i pp ) a derating in percentage (%) t a , ambient temperature ( c) fig.2 pulse derating curve 10 100 1 10 100 ifsm, peak forward surge current (a) number of cycles at 60 hz fig. 4 maximum non-repetitive forward surge current unidirectional only 8.3ms single half sine wave 0 20 40 60 80 100 120 140 00.511.522.533.54 peak pulse current (%) t, time ms fig. 3 clamping power pulse waveform td peak value i ppm tr=10 s, waveform as defined by r.e.a. pulse width(td) is defined as the point where the peak current decays to 50% of i ppm 10 100 1000 10000 1 10 100 cj, junction capacitance (pf) a v( br ), breakdown voltage (v) fig. 5 typical junction capacitance f=1.0mhz vsig=50mvp-p vr = 0 measured at stand-off voltage,vwm 0.1 1 10 100 0.1 1 10 100 1000 10000 p ppm , peak pulse power, kw tp, pulse width, ( s) fig. 1 peak pulse power rating curve non-repetitive pulse waveform shown in fig.3
creat by art test stand-off maximum maximum maximum maximum current voltage reverse leakage peak pulse clamping voltag e temperature i t v wm @ v wm current i ppm @ i ppm coefficient min max (ma) (v) i d ( a) (a) (note 2) vc(v) of v br (%/c) p6smb6.8 kdj 6.12 7.48 10 5.50 1000 58 10.8 0.057 p6smb6.8a kej 6.46 7.14 10 5.80 1000 60 10.5 0.057 p6smb7.5 kfj 6.75 8.25 10 6.05 500 53 11.7 0.061 p6smb7.5a kgj 7.13 7.88 10 6.40 500 55 11.3 0.061 p6smb8.2 khj 7.38 9.02 10 6.63 200 50 12.5 0.065 p6smb8.2a kkj 7.79 8.61 10 7.02 200 52 12.1 0.065 p6smb9.1 klj 8.19 10.00 1.0 7.37 50 45 13.8 0.068 p6smb9.1a kmj 8.65 9.55 1.0 7.78 50 47 13.4 0.068 p6smb10 knj 9.00 11.00 1.0 8.10 10 42 15.0 0.073 p6smb10a kpj 9.50 10.5 1.0 8.55 10 43 14.5 0.073 p6smb11 kqj 9.90 12.1 1.0 8.92 1 38 16.2 0.075 p6smb11a krj 10.5 11.6 1.0 9.40 1 40 15.6 0.075 p6smb12 ksj 10.8 13.2 1.0 9.72 1 36 17.3 0.078 p6smb12a ktj 11.4 12.6 1.0 10.2 1 37 16.7 0.078 p6smb13 kuj 11.7 14.3 1.0 10.5 1 33 19.0 0.081 p6smb13a kvj 12.4 13.7 1.0 11.1 1 34 18.2 0.081 p6smb15 kwj 13.5 16.5 1.0 12.1 1 28 22.0 0.084 p6smb15a kxj 14.3 15.8 1.0 12.8 1 29 21.2 0.084 p6smb16 kyj 14.4 17.6 1.0 12.9 1 26 23.5 0.086 p6smb16a kzj 15.2 16.8 1.0 13.6 1 28 22.5 0.086 p6smb18 ldj 16.2 19.8 1.0 14.5 1 23 26.5 0.088 p6smb18a lej 17.1 18.9 1.0 15.3 1 25 25.5 0.088 p6smb20 lfj 18.0 22.0 1.0 16.2 1 21 29.1 0.090 p6smb20a lgj 19.0 21.0 1.0 17.1 1 22 27.7 0.090 p6smb22 lhj 19.8 24.2 1.0 17.8 1 19 31.9 0.092 p6smb22a lkj 20.9 23.1 1.0 18.8 1 20 30.6 0.092 p6smb24 llj 21.6 26.4 1.0 19.4 1 18 34.7 0.094 p6smb24a lmj 22.8 25.2 1.0 20.5 1 19 33.2 0.094 p6smb27 lnj 24.3 29.7 1.0 21.8 1 16 39.1 0.096 p6smb27a lpj 25.7 28.4 1.0 23.1 1 16.8 37.5 0.096 p6smb30 lqj 27.0 33.0 1.0 24.3 1 14.0 43.5 0.097 p6smb30a lrj 28.5 31.5 1.0 25.6 1 15.0 41.4 0.097 p6smb33 lsj 29.7 36.3 1.0 26.8 1 13.0 47.7 0.098 p6smb33a ltj 31.4 34.7 1.0 28.2 1 13.8 45.7 0.098 p6smb36 luj 32.4 39.6 1.0 29.1 1 12.0 52.0 0.099 p6smb36a lvj 34.2 37.8 1.0 30.8 1 12.6 49.9 0.099 p6smb39 lwj 35.1 42.9 1.0 31.6 1 11.1 56.4 0.100 p6smb39a lxj 37.1 41.0 1.0 33.3 1 11.6 53.9 0.100 p6smb43 lyj 38.7 47.3 1.0 34.8 1 10.0 61.9 0.101 p6smb43a lzj 40.9 45.2 1.0 36.8 1 10.6 59.3 0.101 p6smb47 mdj 42.3 51.7 1.0 38.1 1 9.2 67.8 0.101 p6smb47a mej 44.7 49.4 1.0 40.2 1 9.7 64.8 0.101 p6smb51 mfj 45.9 56.1 1.0 41.3 1 8.5 73.5 0.102 p6smb51a mgj 48.5 53.6 1.0 43.6 1 8.9 70.1 0.102 document number: ds_d1409032 version: l15 p6smb series taiwan semiconductor device device marking code breakdown voltage v br (v) (note 1)
creat by art test stand-off maximum maximum maximum maximum current voltage reverse leakage peak pulse clamping voltag e temperature i t v wm @ v wm current i ppm @ i ppm coefficient min max (ma) (v) i d ( a) (a) (note 2) vc(v) of v br (%/c) p6smb56 mhj 50.4 61.6 1.0 45.4 1 7.8 80.5 0.103 p6smb56a mkj 53.2 58.8 1.0 47.8 1 8.1 77.0 0.103 p6smb62 mlj 55.8 68.2 1.0 50.2 1 7.0 89.0 0.104 p6smb62a mmj 58.9 65.1 1.0 53.0 1 7.4 85.0 0.104 p6smb68 mnj 61.2 74.8 1.0 55.1 1 6.4 98.0 0.104 p6smb68a mpj 64.6 71.4 1.0 58.1 1 6.8 92.0 0.104 p6smb75 mqj 67.5 82.5 1.0 60.7 1 5.8 108 0.105 p6smb75a mrj 71.3 78.8 1.0 64.1 1 6.1 103 0.105 p6smb82 msj 73.8 90.2 1.0 66.4 1 5.3 118 0.105 p6smb82a mtj 77.9 86.1 1.0 70.1 1 5.5 113 0.105 P6SMB91 muj 81.9 100 1.0 73.7 1 4.8 131 0.106 P6SMB91a mvj 86.5 95.5 1.0 77.8 1 5.0 125 0.106 p6smb100 mwj 90 110 1.0 81.0 1 4.3 144 0.106 p6smb100a mxj 95 105 1.0 85.5 1 4.5 137 0.106 p6smb110 myj 99 121 1.0 89.2 1 3.9 158 0.107 p6smb110a mzj 105 116 1.0 94.0 1 4.1 152 0.107 p6smb120 ndj 108 132 1.0 97.2 1 3.6 173 0.107 p6smb120a nej 114 126 1.0 102.0 1 3.8 165 0.107 p6smb130 nfj 117 143 1.0 105.0 1 3.3 187 0.107 p6smb130a ngj 124 137 1.0 111.0 1 3.5 179 0.107 p6smb150 nhj 135 165 1.0 121.0 1 2.9 215 0.108 p6smb150a nkj 143 158 1.0 128.0 1 3.0 207 0.108 p6smb160 nlj 144 176 1.0 130.0 1 2.7 230 0.108 p6smb160a nmj 152 168 1.0 136.0 1 2.8 219 0.108 p6smb170 nnj 153 187 1.0 138.0 1 2.5 244 0.108 p6smb170a npj 162 179 1.0 145.0 1 2.6 234 0.108 p6smb180 nqj 162 198 1.0 146.0 1 2.4 258 0.108 p6smb180a nrj 171 189 1.0 154.0 1 2.5 246 0.108 p6smb200 nsj 180 220 1.0 162.0 1 2.1 287 0.108 p6smb200a ntj 190 210 1.0 171.0 1 2.2 274 0.108 p6smb220 nuj 198 242 1.0 175.0 1 1.8 342 0.108 p6smb220a nvj 209 231 1.0 185.0 1 1.9 328 0.108 notes: 1. v br measure after i t applied for 300 s, i t =square wave pulse or equivalent. 2. surge current waveform per figure. 3 and derate per figure. 2. 3. for bipolar types having v wm of 10 volts and under, the i d limit is doubled. 4. for bidirectional use c or ca suffix for types p6smb6.8 - p6smb220a. 5. all terms and symbols are consistent with ansi/ieee c62.35. document number: ds_d1409032 version: l15 device device marking code breakdown voltage v br (v) (note 1) p6smb series taiwan semiconductor
min max min max a 1.95 2.10 0.077 0.083 b 4.25 4.75 0.167 0.187 c 3.48 3.73 0.137 0.147 d 1.99 2.61 0.078 0.103 e 0.90 1.41 0.035 0.056 f 5.10 5.30 0.201 0.209 g 0.10 0.20 0.004 0.008 h 0.15 0.31 0.006 0.012 p/n = device marking code g = green compound yw = date code f = factory code document number: ds_d1409032 version: l15 marking diagram d 1.8 0.071 e 6.8 0.268 b 2.5 0.098 c 4.3 0.169 suggested pad layout symbol unit (mm) unit (inch) a 2.3 0.091 p6smb series taiwan semiconductor package outline dimensions dim. unit (mm) unit (inch) do-214aa (smb)
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